Subthreshold-swing-adjustable tunneling-field-effect-transistor-based random-access memory for nonvolatile operation
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- In Huh
- Sogang University Department of Electronic Engineering, , 35 Baekbeom-ro, Mapo-gu, Seoul 04107, South Korea
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- Woo Young Cheon
- Sogang University Department of Electronic Engineering, , 35 Baekbeom-ro, Mapo-gu, Seoul 04107, South Korea
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- Woo Young Choi
- Sogang University Department of Electronic Engineering, , 35 Baekbeom-ro, Mapo-gu, Seoul 04107, South Korea
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説明
<jats:p>A subthreshold-swing-adjustable tunneling-field-effect-transistor-based random-access memory (SAT RAM) has been proposed and fabricated for low-power nonvolatile memory applications. The proposed SAT RAM cell demonstrates adjustable subthreshold swing (SS) depending on stored information: small SS in the erase state (“1” state) and large SS in the program state (“0” state). Thus, SAT RAM cells can achieve low read voltage (Vread) with a large memory window in addition to the effective suppression of ambipolar behavior. These unique features of the SAT RAM are originated from the locally stored charge, which modulates the tunneling barrier width (Wtun) of the source-to-channel tunneling junction.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 108 (15), 2016-04-11
AIP Publishing