ZnO single nanowire-based UV detectors

  • Sachindra Nath Das
    Yonsei University Department of Material Science and Engineering, Information and Electronic Materials Research Laboratory, , 134 Shinchon-Dong, Seoul 120-749, Republic of Korea
  • Kyeong-Ju Moon
    Yonsei University Department of Material Science and Engineering, Information and Electronic Materials Research Laboratory, , 134 Shinchon-Dong, Seoul 120-749, Republic of Korea
  • Jyoti Prakash Kar
    Yonsei University Department of Material Science and Engineering, Information and Electronic Materials Research Laboratory, , 134 Shinchon-Dong, Seoul 120-749, Republic of Korea
  • Ji-Hyuk Choi
    Yonsei University Department of Material Science and Engineering, Information and Electronic Materials Research Laboratory, , 134 Shinchon-Dong, Seoul 120-749, Republic of Korea
  • Junjie Xiong
    Yonsei University Department of Material Science and Engineering, Information and Electronic Materials Research Laboratory, , 134 Shinchon-Dong, Seoul 120-749, Republic of Korea
  • Tae Il Lee
    Yonsei University Department of Material Science and Engineering, Information and Electronic Materials Research Laboratory, , 134 Shinchon-Dong, Seoul 120-749, Republic of Korea
  • Jae-Min Myoung
    Yonsei University Department of Material Science and Engineering, Information and Electronic Materials Research Laboratory, , 134 Shinchon-Dong, Seoul 120-749, Republic of Korea

書誌事項

公開日
2010-07-12
DOI
  • 10.1063/1.3464287
公開者
AIP Publishing

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説明

<jats:p>In this report, ZnO single nanowire (NW)-based devices were fabricated on the same nanowire by e-beam lithography so that both sides had Ohmic contact and one side had Schottky contact. Information about the mechanism for low-power UV detection by these devices was unambiguously provided by I-V measurements. Adsorption and desorption of oxygen molecules at the NW surface are responsible for the UV detection by the device with Ohmic contacts on both sides. Barrier height modulations and interface states are responsible for UV detection by the device with Schottky contact on one side.</jats:p>

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