Transition between grain boundary and intragrain scattering transport mechanisms in boron-doped zinc oxide thin films

J. Steinhauser, S. Faÿ, N. Oliveira, E. Vallat-Sauvain, C. Ballif

doi:10.1063/1.2719158

Transition between grain boundary and intragrain scattering transport mechanisms in boron-doped zinc oxide thin films

DOI PDF 被引用文献10件

J. Steinhauser

University of Neuchâtel Institute of Microtechnology (IMT), , Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Switzerland
S. Faÿ

University of Neuchâtel Institute of Microtechnology (IMT), , Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Switzerland
N. Oliveira

University of Neuchâtel Institute of Microtechnology (IMT), , Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Switzerland
E. Vallat-Sauvain

University of Neuchâtel Institute of Microtechnology (IMT), , Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Switzerland
C. Ballif

University of Neuchâtel Institute of Microtechnology (IMT), , Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Switzerland

書誌事項

公開日: 2007-04-02

DOI

10.1063/1.2719158

公開者: AIP Publishing

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説明

<jats:p>A comprehensive model for the electronic transport in polycrystalline ZnO:B thin films grown by low pressure chemical vapor deposition is presented. The optical mobilities and carrier concentration calculated from reflectance spectra using the Drude model were compared with the data obtained by Hall measurements. By analyzing the results for samples with large variation of grain size and doping level, the respective influences on the transport of potential barriers at grain boundaries and intragrain scattering could be separated unambiguously. A continuous transition from grain boundary scattering to intragrain scattering is observed for doping level increasing from 3×1019to2×1020cm−3.</jats:p>