Electron intersubband transitions to 0.8 eV (1.55 μm) in InGaAs/AlAs single quantum wells

DOI PDF 被引用文献5件
  • J. H. Smet
    Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
  • L. H. Peng
    Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
  • Y. Hirayama
    Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
  • C. G. Fonstad
    Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

書誌事項

公開日
1994-02-21
DOI
  • 10.1063/1.111960
公開者
AIP Publishing

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説明

<jats:p>We report a polarization-resolved infrared absorption study of the quantum-well-width dependence of the electron intersubband transitions in strained InGaAs/AlAs single quantum wells (SQWs) 3, 4, and 5 monolayers (ML) in width. An intersubband transition energy as high as 0.8 eV (i.e., a wavelength as short as 1.55 μm) is observed with transverse magnetic field polarization for a 3-ML-thick InGaAs SQW. This is the highest quantum-well intersubband transition energy ever reported in any materials system.</jats:p>

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