Local, Nonvolatile Electronic Writing of Epitaxial Pb(Zr <sub>0.52</sub> Ti <sub>0.48</sub> )O <sub>3</sub> /SrRuO <sub>3</sub> Heterostructures

DOI Web Site 被引用文献5件
  • C. H. Ahn
    C. H. Ahn, T. Tybell, L. Antognazza, Ø. Fischer, J.-M. Triscone, Département de Physique de la Matière Condensée, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva 4, Switzerland.
  • T. Tybell
    C. H. Ahn, T. Tybell, L. Antognazza, Ø. Fischer, J.-M. Triscone, Département de Physique de la Matière Condensée, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva 4, Switzerland.
  • L. Antognazza
    C. H. Ahn, T. Tybell, L. Antognazza, Ø. Fischer, J.-M. Triscone, Département de Physique de la Matière Condensée, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva 4, Switzerland.
  • K. Char
    C. H. Ahn, T. Tybell, L. Antognazza, Ø. Fischer, J.-M. Triscone, Département de Physique de la Matière Condensée, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva 4, Switzerland.
  • R. H. Hammond
    C. H. Ahn, T. Tybell, L. Antognazza, Ø. Fischer, J.-M. Triscone, Département de Physique de la Matière Condensée, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva 4, Switzerland.
  • M. R. Beasley
    C. H. Ahn, T. Tybell, L. Antognazza, Ø. Fischer, J.-M. Triscone, Département de Physique de la Matière Condensée, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva 4, Switzerland.
  • Ø. Fischer
    C. H. Ahn, T. Tybell, L. Antognazza, Ø. Fischer, J.-M. Triscone, Département de Physique de la Matière Condensée, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva 4, Switzerland.
  • J.-M. Triscone
    C. H. Ahn, T. Tybell, L. Antognazza, Ø. Fischer, J.-M. Triscone, Département de Physique de la Matière Condensée, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva 4, Switzerland.

説明

<jats:p> A scanning probe microscope was used to induce local, nonvolatile field effects in epitaxial, ferroelectric Pb(Zr <jats:sub>0.52</jats:sub> Ti <jats:sub>0.48</jats:sub> )O <jats:sub>3</jats:sub> /SrRuO <jats:sub>3</jats:sub> heterostructures. Field-effected regions with linewidths as small as 3500 angstroms were written by locally switching the polarization field of the Pb(Zr <jats:sub>0.52</jats:sub> Ti <jats:sub>0.48</jats:sub> )O <jats:sub>3</jats:sub> layer; the electronic density of the underlying metallic SrRuO <jats:sub>3</jats:sub> layer was modified and the sheet resistance was changed by up to 300 ohms per square. This procedure is completely reversible and allows submicrometer electronic features to be written directly in two dimensions, with no external electrical contacts or lithographic steps required. </jats:p>

収録刊行物

  • Science

    Science 276 (5315), 1100-1103, 1997-05-16

    American Association for the Advancement of Science (AAAS)

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