High efficiency low threshold current 1.3 <i>μ</i>m InAs quantum dot lasers on on-axis (001) GaP/Si
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- Daehwan Jung
- Institute for Energy Efficiency, University of California Santa Barbara 1 , California 93106, USA
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- Justin Norman
- Materials Department, University of California Santa Barbara 2 , California 93106, USA
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- M. J. Kennedy
- Department of Electrical and Computer Engineering, University of California Santa Barbara 3 , California 93106, USA
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- Chen Shang
- Materials Department, University of California Santa Barbara 2 , California 93106, USA
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- Bongki Shin
- Institute for Energy Efficiency, University of California Santa Barbara 1 , California 93106, USA
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- Yating Wan
- Department of Electrical and Computer Engineering, University of California Santa Barbara 3 , California 93106, USA
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- Arthur C. Gossard
- Institute for Energy Efficiency, University of California Santa Barbara 1 , California 93106, USA
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- John E. Bowers
- Institute for Energy Efficiency, University of California Santa Barbara 1 , California 93106, USA
説明
<jats:p>We demonstrate highly efficient, low threshold InAs quantum dot lasers epitaxially grown on on-axis (001) GaP/Si substrates using molecular beam epitaxy. Electron channeling contrast imaging measurements show a threading dislocation density of 7.3 × 106 cm−2 from an optimized GaAs template grown on GaP/Si. The high-quality GaAs templates enable as-cleaved quantum dot lasers to achieve a room-temperature continuous-wave (CW) threshold current of 9.5 mA, a threshold current density as low as 132 A/cm2, a single-side output power of 175 mW, and a wall-plug-efficiency of 38.4% at room temperature. As-cleaved QD lasers show ground-state CW lasing up to 80 °C. The application of a 95% high-reflectivity coating on one laser facet results in a CW threshold current of 6.7 mA, which is a record-low value for any kind of Fabry-Perot laser grown on Si.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 111 (12), 122107-, 2017-09-18
AIP Publishing