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<jats:title>Abstract</jats:title><jats:p>The phase diagram of electron‐hole drop formation in excited direct band gap semiconductors is calculated including the coupling to LO phonons. Results are given for CdS, CdSe, ZnS, GaAs, and CdTe. Critical temperatures as high as 64 K. (CdS) are obtained. In the self‐energy calculation the single‐plasmon pole approximation with the full RPA treatment is compared critically.</jats:p>
収録刊行物
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- physica status solidi (b)
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physica status solidi (b) 83 (1), 85-91, 1977-09
Wiley