Effects of Titanium Layer Oxygen Scavenging on the High-<i>k</i>/InGaAs Interface
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- Roy Winter
- Department of Materials Science and Engineering, Technion-Israel Institute of Technology, Haifa 3200003, Israel
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- Pini Shekhter
- Department of Materials Science and Engineering, Technion-Israel Institute of Technology, Haifa 3200003, Israel
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- Kechao Tang
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
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- Luca Floreano
- Laboratorio TASC, IOM-CNR, Area di Ricerca, Trieste 34149, Italy
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- Alberto Verdini
- Laboratorio TASC, IOM-CNR, Area di Ricerca, Trieste 34149, Italy
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- Paul C. McIntyre
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
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- Moshe Eizenberg
- Department of Materials Science and Engineering, Technion-Israel Institute of Technology, Haifa 3200003, Israel
書誌事項
- 公開日
- 2016-06-23
- DOI
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- 10.1021/acsami.6b02957
- 公開者
- American Chemical Society (ACS)
この論文をさがす
収録刊行物
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- ACS Applied Materials & Interfaces
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ACS Applied Materials & Interfaces 8 (26), 16979-16984, 2016-06-23
American Chemical Society (ACS)
