Dynamics of ultrafast reversible phase transitions in GeSb films triggered by picosecond laser pulses

DOI PDF 被引用文献2件
  • J. Siegel
    Instituto de Optica, CSIC, C/Serrano 121, 28006 Madrid, Spain
  • C. N. Afonso
    Instituto de Optica, CSIC, C/Serrano 121, 28006 Madrid, Spain
  • J. Solis
    Instituto de Optica, CSIC, C/Serrano 121, 28006 Madrid, Spain

書誌事項

公開日
1999-11-15
DOI
  • 10.1063/1.125244
公開者
AIP Publishing

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説明

<jats:p>The dynamics and the reversibility conditions of crystalline↔amorphous transitions induced in thin Ge0.07Sb0.93 films upon picosecond laser pulse melting were studied by real-time reflectivity measurements with nanosecond and picosecond resolution. The full transformation time could be resolved in a single exposure experiment using a novel setup based on a streak camera. It is shown that under optimum conditions both crystallization and amorphization are completed within 400 ps. The fundamental requirement for the occurrence of such ultrafast phase transformations is to reduce the latent heat released upon solidification. Amorphization is then achieved via bulk solidification of the fully molten film at a very large supercooling.</jats:p>

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