On the Core Structure of the Glide‐Set 90° and 30° Partial Dislocations in Silicon

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<jats:title>Abstract</jats:title><jats:p>By considering valence force potentials the cores of the glide‐set 30° and 90° partial dislocations in silicon are investigated. It is shown that the 30° partial probably does not contain dangling bonds, while on the other hand dangling bonds at the 90° partial are more likely to exist as pairing of bonds across its core is opposed by a strong shear field. The implications of the results on the electron states of the partials are briefly discussed.</jats:p>

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