“Blue” temperature-induced shift and band-tail emission in InGaN-based light sources

DOI PDF 被引用文献26件
  • Petr G. Eliseev
    Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106
  • Piotr Perlin
    Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106
  • Jinhyun Lee
    Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106
  • Marek Osiński
    Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106

書誌事項

公開日
1997-08-04
DOI
  • 10.1063/1.119797
公開者
AIP Publishing

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説明

<jats:p>Electro- and photoluminescence spectra of high-brightness light-emitting AlGaN/InGaN/GaN single-quantum-well structures are studied over a broad range of temperatures and pumping levels. Blue shift of the spectral peak position was observed along with an increase of temperature and current. An involvement of band-tail states in the radiative recombination was considered, and a quantitative description of the blue temperature-induced shift was proposed assuming a Gaussian shape of the band tail.</jats:p>

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