Electron cyclotron resonance etching characteristics of GaN in SiCl4/Ar

DOI PDF 被引用文献5件
  • L. Zhang
    Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87131
  • J. Ramer
    Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87131
  • J. Brown
    Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87131
  • K. Zheng
    Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87131
  • L. F. Lester
    Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87131
  • S. D. Hersee
    Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87131

書誌事項

公開日
1996-01-15
DOI
  • 10.1063/1.116718
公開者
AIP Publishing

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説明

<jats:p>Electron cyclotron resonance (ECR) plasma etching characteristics of gallium nitride (GaN) are investigated using low pressure (4–10 mTorr) SiCl4/Ar ECR discharges. The purpose of this effort is to examine the dry etching processes of GaN that do not require hydrogen, which is known to cause carrier compensation in GaN. A maximum etching rate of 960 Å/min and good surface morphologies are obtained. The etch rate is found to increase near-linearly with increasing dc bias, and a minimum dc bias of 100 V is required to initiate etching. Enhanced etching rates are obtained as the fraction of active chemical etchant species (SiCl4) in the discharge is increased. We have also found that the material quality significantly affects the etch rate. The latter decreases with x-ray rocking curve half-width and increases with defect density.</jats:p>

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