Giant tunneling magnetoresistance up to 410% at room temperature in fully epitaxial Co∕MgO∕Co magnetic tunnel junctions with bcc Co(001) electrodes

DOI PDF 被引用文献39件
  • Shinji Yuasa
    National Institute of Advanced Industrial Science and Technology (AIST) , Nanoelectronics Research Institute, Tsukuba, Ibaraki 305-8568, Japan and , Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012, Japan
  • Akio Fukushima
    National Institute of Advanced Industrial Science and Technology (AIST) , Nanoelectronics Research Institute, Tsukuba, Ibaraki 305-8568, Japan
  • Hitoshi Kubota
    National Institute of Advanced Industrial Science and Technology (AIST) , Nanoelectronics Research Institute, Tsukuba, Ibaraki 305-8568, Japan
  • Yoshishige Suzuki
    National Institute of Advanced Industrial Science and Technology (AIST) , Nanoelectronics Research Institute, Tsukuba, Ibaraki 305-8568, Japan
  • Koji Ando
    National Institute of Advanced Industrial Science and Technology (AIST) , Nanoelectronics Research Institute, Tsukuba, Ibaraki 305-8568, Japan

説明

<jats:p>Fully epitaxial Co(001)∕MgO(001)∕Co(001) magnetic tunnel junctions (MTJs) with metastable bcc Co(001) electrodes were fabricated with molecular beam epitaxy. The MTJs exhibited giant magnetoresistance (MR) ratios up to 410% at room temperature, the highest value reported to date. Temperature dependence of the MR ratio was observed to be very small compared with fully epitaxial Fe∕MgO∕Fe and textured CoFeB∕MgO∕CoFeB MTJs. The MR ratio of the Co∕MgO∕Co MTJ showed larger bias voltage dependence than that of the epitaxial Fe∕MgO∕Fe MTJs, which probably reflects the band structures of bcc Co and Fe for the k‖=0 direction.</jats:p>

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