Preparation of AlxGa1-xN/GaN heterostructure by MOVPE

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書誌事項

公開日
1990-07
権利情報
  • https://www.elsevier.com/tdm/userlicense/1.0/
DOI
  • 10.1016/0022-0248(90)90156-f
公開者
Elsevier BV

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説明

Abstract The Al x Ga 1-x N/GaN heterostructure (HS) is prepared by metalorganic vapor phase epitaxy (MOVPE) at atmospheric pressure on sapphire substrate. The surface morphology of the Al x Ga 1-x N/GaN HS is investigated. When the Al x Ga 1-x N layer is thinner than a certain thickness ( h c ), the surface is smooth and has no cracks. While when the layer is thicker than h c , many cracks and V-shaped grooves appear in the Al x Ga 1- x N and GaN layers, and their densities increase with increasing x . The mechanism of the cracking is the relaxation of the strain energy due to the lattice misfit between Al x Ga 1-x N and GaN during the growth, but not due to the difference in thermal expansion coefficient between Al x Ga 1-x N and GaN during the cooling after the growth. For the preparation of the Al x Ga 1-x N/GaN HS with a smooth surface free from cracks, it is important to control the thickness and the composition of the Al x Ga 1-x N layer.

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