Growth of GaAs-Ga1−<i>x</i>Al<i>x</i>As over preferentially etched channels by molecular beam epitaxy: A technique for two-dimensional thin-film definition

DOI PDF 被引用文献6件
  • W. T. Tsang
    Bell Laboratories, Murray Hill, New Jersey 07974
  • A. Y. Cho
    Bell Laboratories, Murray Hill, New Jersey 07974

書誌事項

公開日
1977-03-15
DOI
  • 10.1063/1.89373
公開者
AIP Publishing

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説明

<jats:p>In this paper, studies of the molecular beam epitaxy (MBE) of GaAs-Ga1−xAlxAs multilayer structures over preferentially etched channels on GaAs substrates are described. It is found that the growth characteristics with MBE are entirely different from those obtained from similar experiments when LPE is used. Results obtained indicate that this etch-and-fill technique using MBE as the growth process should be particularly useful in fabricating injection lasers, laser arrays, and integrated optics components which require planar definition.</jats:p>

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