Diffusive base transport in narrow base InP/Ga0.47In0.53As heterojunction bipolar transistors

DOI PDF 被引用文献2件
  • D. Ritter
    AT&T Bell Laboratories, Murray Hill, New Jersey 07974
  • R. A. Hamm
    AT&T Bell Laboratories, Murray Hill, New Jersey 07974
  • A. Feygenson
    AT&T Bell Laboratories, Murray Hill, New Jersey 07974
  • M. B. Panish
    AT&T Bell Laboratories, Murray Hill, New Jersey 07974
  • S. Chandrasekhar
    AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, New Jersey 07733

書誌事項

公開日
1991-12-23
DOI
  • 10.1063/1.105698
公開者
AIP Publishing

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説明

<jats:p>The common emitter current gain of InP/Ga0.47In0.53As heterojunction bipolar transitors having a base doping level of 7×1019 cm−3 is found to increase monotonically with decreasing base thickness in the range of 200–1000 Å. The variation of the gain with base thickness WB is proportional to 1×W2B, as expected for diffusive base transport, and a high injection efficiency.</jats:p>

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