Selective area deposited blue GaN–InGaN multiple-quantum well light emitting diodes over silicon substrates

DOI PDF 被引用文献5件
  • J. W. Yang
    Department of Electrical and Computer Engineering, University of South Carolina, Columbia, South Carolina 29028
  • A. Lunev
    Department of Electrical and Computer Engineering, University of South Carolina, Columbia, South Carolina 29028
  • G. Simin
    Department of Electrical and Computer Engineering, University of South Carolina, Columbia, South Carolina 29028
  • A. Chitnis
    Department of Electrical and Computer Engineering, University of South Carolina, Columbia, South Carolina 29028
  • M. Shatalov
    Department of Electrical and Computer Engineering, University of South Carolina, Columbia, South Carolina 29028
  • M. Asif Khan
    Department of Electrical and Computer Engineering, University of South Carolina, Columbia, South Carolina 29028
  • Joseph E. Van Nostrand
    Materials and Manufacturing Directorate, AFRL/MLPA Bldg. 620, 2241 Avionics Circle, Ste. 21, Wright-Patterson AFB, Ohio 45433
  • R. Gaska
    Sensor Electronic Technology, Inc., Troy, New York 12180

書誌事項

公開日
2000-01-17
DOI
  • 10.1063/1.125745
公開者
AIP Publishing

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説明

<jats:p>We report on fabrication and characterization of blue GaN–InGaN multi-quantum well (MQW) light-emitting diodes (LEDs) over (111) silicon substrates. Device epilayers were fabricated using unique combination of molecular beam epitaxy and low-pressure metalorganic chemical vapor deposition growth procedure in selective areas defined by openings in a SiO2 mask over the substrates. This selective area deposition procedure in principle can produce multicolor devices using a very simple fabrication procedure. The LEDs had a peak emission wavelength of 465 nm with a full width at half maximum of 40 nm. We also present the spectral emission data with the diodes operating up to 250 °C. The peak emission wavelengths are measured as a function of both dc and pulse bias current and plate temperature to estimate the thermal impedance.</jats:p>

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