Phase-change memory technology with self-aligned μTrench cell architecture for 90nm node and beyond

DOI Web Site Web Site 1 Citations

Journal

Solid-State Electronics

Solid-State Electronics 52 (9), 1467-1472, 2008-09

Elsevier BV

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Details 詳細情報について

CRID

1361981471119262848
DOI

10.1016/j.sse.2008.04.031
ISSN

00381101
Web Site

https://api.elsevier.com/content/article/PII:S0038110108001287?httpAccept=text/xml

https://api.elsevier.com/content/article/PII:S0038110108001287?httpAccept=text/plain
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