Diamond Schottky-pn diode with high forward current density and fast switching operation

DOI PDF 被引用文献22件
  • Toshiharu Makino
    National Institute of Advanced Industrial Science and Technology (AIST) 1 Nanotechnology Research Institute, , Tsukuba, Ibaraki 305-8568, Japan
  • Satoshi Tanimoto
    Nissan Motor Co., Ltd. 2 Nissan Research Center, , Yokosuka, Kanagawa 237-8523, Japan
  • Yusuke Hayashi
    National Institute of Advanced Industrial Science and Technology (AIST) 3 Energy Semiconductor Electronics Research Laboratory, , Tsukuba, Ibaraki 305-8568, Japan
  • Hiromitsu Kato
    National Institute of Advanced Industrial Science and Technology (AIST) 1 Nanotechnology Research Institute, , Tsukuba, Ibaraki 305-8568, Japan
  • Norio Tokuda
    National Institute of Advanced Industrial Science and Technology (AIST) 1 Nanotechnology Research Institute, , Tsukuba, Ibaraki 305-8568, Japan
  • Masahiko Ogura
    National Institute of Advanced Industrial Science and Technology (AIST) 1 Nanotechnology Research Institute, , Tsukuba, Ibaraki 305-8568, Japan
  • Daisuke Takeuchi
    National Institute of Advanced Industrial Science and Technology (AIST) 1 Nanotechnology Research Institute, , Tsukuba, Ibaraki 305-8568, Japan
  • Kazuhiro Oyama
    National Institute of Advanced Industrial Science and Technology (AIST) 1 Nanotechnology Research Institute, , Tsukuba, Ibaraki 305-8568, Japan
  • Hiromichi Ohashi
    National Institute of Advanced Industrial Science and Technology (AIST) 3 Energy Semiconductor Electronics Research Laboratory, , Tsukuba, Ibaraki 305-8568, Japan
  • Hideyo Okushi
    National Institute of Advanced Industrial Science and Technology (AIST) 1 Nanotechnology Research Institute, , Tsukuba, Ibaraki 305-8568, Japan
  • Satoshi Yamasaki
    National Institute of Advanced Industrial Science and Technology (AIST) 1 Nanotechnology Research Institute, , Tsukuba, Ibaraki 305-8568, Japan

書誌事項

公開日
2009-06-29
DOI
  • 10.1063/1.3159837
公開者
AIP Publishing

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説明

<jats:p>We fabricated a diamond diode, namely a Schottky-pn diode (SPND), which is composed of a fully depleted n-type active layer sandwiched between a highly doped p-type layer and a Schottky metal layer. The SPND has superior characteristics that overcome the weak points of both a Schottky barrier diode and a pn diode. That is, the SPND showed high current density (over 4000 A/cm2) with low specific resistance (0.4 mΩ cm2) at a forward bias of 6 V while maintaining a high rectification ratio of ∼1010. Moreover, the SPND showed extremely fast turn-off speed of nanosecond order.</jats:p>

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