Controlling the diameter, growth rate, and density of vertically aligned carbon nanotubes synthesized by microwave plasma-enhanced chemical vapor deposition

DOI PDF 被引用文献8件
  • Young Chul Choi
    Department of Semiconductor Science and Technology, and Semiconductor Physics Research Center, Jeonbuk National University, Jeonju 561-756, Korea
  • Young Min Shin
    Department of Semiconductor Science and Technology, and Semiconductor Physics Research Center, Jeonbuk National University, Jeonju 561-756, Korea
  • Young Hee Lee
    Department of Semiconductor Science and Technology, and Semiconductor Physics Research Center, Jeonbuk National University, Jeonju 561-756, Korea
  • Byung Soo Lee
    Department of Semiconductor Science and Technology, and Semiconductor Physics Research Center, Jeonbuk National University, Jeonju 561-756, Korea
  • Gyeong-Su Park
    Analytical Engineering Laboratory, Samsung Advanced Institute of Technology, Suwon 440-600, Korea
  • Won Bong Choi
    Display Laboratory, Samsung Advanced Institute of Technology, Suwon 440-600, Korea
  • Nae Sung Lee
    Display Laboratory, Samsung Advanced Institute of Technology, Suwon 440-600, Korea
  • Jong Min Kim
    Display Laboratory, Samsung Advanced Institute of Technology, Suwon 440-600, Korea

書誌事項

公開日
2000-04-24
DOI
  • 10.1063/1.126348
公開者
AIP Publishing

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説明

<jats:p>Vertically aligned carbon nanotubes were synthesized on Ni-deposited Si substrates using microwave plasma-enhanced chemical vapor deposition. The grain size of Ni thin films varied with the rf power density during the rf magnetron sputtering process. We found that the diameter, growth rate, and density of carbon nanotubes could be controlled systematically by the grain size of Ni thin films. With decreasing the grain size of Ni thin films, the diameter of the nanotubes decreased, whereas the growth rate and density increased. High-resolution transmission electron microscope images clearly demonstrated synthesized nanotubes to be multiwalled.</jats:p>

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