Low-voltage, 30 nm channel length, organic transistors with a self-assembled monolayer as gate insulating films

DOI PDF 14 Citations
  • J. Collet
    Institut d’Electronique et de Micro-électronique du Nord-CNRS, BP69, Avenue Poincaré, F-59652 cedex, Villeneuve d’Ascq, France
  • O. Tharaud
    Institut d’Electronique et de Micro-électronique du Nord-CNRS, BP69, Avenue Poincaré, F-59652 cedex, Villeneuve d’Ascq, France
  • A. Chapoton
    Institut d’Electronique et de Micro-électronique du Nord-CNRS, BP69, Avenue Poincaré, F-59652 cedex, Villeneuve d’Ascq, France
  • D. Vuillaume
    Institut d’Electronique et de Micro-électronique du Nord-CNRS, BP69, Avenue Poincaré, F-59652 cedex, Villeneuve d’Ascq, France

Bibliographic Information

Published
2000-04-03
DOI
  • 10.1063/1.126219
Publisher
AIP Publishing

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<jats:p>We made nanometer-scale (gate length of 30 nm) organic thin-film transistors using a self-assembled monolayer (2 nm thick) as a gate insulator. The fabrication steps combine electron-beam lithography and lift-off techniques for the deposition of both metal electrodes and organic semiconductors with a chemical approach (self-assembly of organic molecules) to fabricate the gate insulator. Good performances of these transistors (with a record subthreshold slop of 350 mV/decade and a cutoff frequency of 20 kHz) and low-voltage operation (&lt;2 V) are demonstrated down to a gate length of 200 nm. A gate voltage modulation of the source-to-drain tunnel current is demonstrated for the 30 nm gate length device.</jats:p>

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