Mechanisms affecting the photoluminescence spectra of GaInNAs after post-growth annealing
-
- E. Tournié
- Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique (CRHEA/CNRS), Rue Bernard Grégory, Parc Sophia Antipolis, F-06560 Valbonne, France
-
- M.-A. Pinault
- Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique (CRHEA/CNRS), Rue Bernard Grégory, Parc Sophia Antipolis, F-06560 Valbonne, France
-
- A. Guzmán
- Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique (CRHEA/CNRS), Rue Bernard Grégory, Parc Sophia Antipolis, F-06560 Valbonne, France
説明
<jats:p>We have investigated by photoluminescence spectroscopy and x-ray diffraction the influence of ex situ postgrowth annealing on the properties of a series of dedicated Ga(In)(N)As ternary and quaternary quantum wells (QWs) confined by various barrier layers. We show that the low growth temperature and not N per se, is largely responsible for the low radiative efficiency of Ga(In)NAs QWs. Furthermore, postgrowth annealing induces a blueshift of the photoluminescence line in the case of quaternary GaInNAs QWs only, while x-ray diffraction reveals the absence of compositional change. We conclude with the occurrence of a local reorganization of the N-bonding configuration within the GaInNAs quaternary material during annealing.</jats:p>
収録刊行物
-
- Applied Physics Letters
-
Applied Physics Letters 80 (22), 4148-4150, 2002-06-03
AIP Publishing