Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells

K. C. Zeng, J. Y. Lin, H. X. Jiang, A. Salvador, G. Popovici, H. Tang, W. Kim, H. Morkoç

doi:10.1063/1.119896

Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells

DOI PDF 被引用文献2件

K. C. Zeng

Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601
J. Y. Lin

Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601
H. X. Jiang

Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601
A. Salvador

Materials Research Laboratory and Coordinated Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
G. Popovici

Materials Research Laboratory and Coordinated Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
H. Tang

Materials Research Laboratory and Coordinated Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
W. Kim

Materials Research Laboratory and Coordinated Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
H. Morkoç

Materials Research Laboratory and Coordinated Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801

説明

<jats:p>Effects of well thickness and Si doping on the optical properties of GaN/AlGaN (MQWs) have been investigated by picosecond time-resolved photoluminescence (PL) measurements. Our results have yielded that (i) the optical transitions in nominally undoped MQWs with narrow well thicknesses (Lw<40 Å) were blue shifted with respect to the GaN epilayer due to quantum confinement, however, no such blue shift was evident for the MQWs with well thicknesses larger than 40 Å, (ii) the band-to-impurity transitions were the dominant emission lines in nominally undoped MQWs of large well thicknesses (Lw>40 Å) at low temperatures, and (iii) Si doping improved significantly the crystalline quality of MQWs of large well thicknesses (Lw>40 Å). The implications of these results on the device applications based on III-nitride MQWs have been discussed.</jats:p>