Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition
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- A. Michon
- CRHEA-CNRS 1 , Rue Bernard Gregory, 06560 Valbonne, France
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- A. Tiberj
- L2C-CNRS/Université Montpellier 2 2 , Place Eugène Bataillon, 34095 Montpellier, France
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- S. Vézian
- CRHEA-CNRS 1 , Rue Bernard Gregory, 06560 Valbonne, France
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- E. Roudon
- CRHEA-CNRS 1 , Rue Bernard Gregory, 06560 Valbonne, France
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- D. Lefebvre
- CRHEA-CNRS 1 , Rue Bernard Gregory, 06560 Valbonne, France
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- M. Portail
- CRHEA-CNRS 1 , Rue Bernard Gregory, 06560 Valbonne, France
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- M. Zielinski
- NOVASiC, Savoie Technolac 3 , Arche Bat 4, BP267, 73375 Le Bourget du Lac, France
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- T. Chassagne
- NOVASiC, Savoie Technolac 3 , Arche Bat 4, BP267, 73375 Le Bourget du Lac, France
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- J. Camassel
- L2C-CNRS/Université Montpellier 2 2 , Place Eugène Bataillon, 34095 Montpellier, France
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- Y. Cordier
- CRHEA-CNRS 1 , Rue Bernard Gregory, 06560 Valbonne, France
書誌事項
- 公開日
- 2014-02-17
- DOI
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- 10.1063/1.4866285
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>While the integration of graphene on semiconductor surfaces is important to develop new applications, epitaxial graphene has only been integrated on SiC substrates or 3C-SiC/Si templates. In this work, we explore the possibility of growing graphene on AlN/Si(111) templates. Using a chemical vapor deposition process with propane as the carbon source, we have obtained graphitic films (from 2 to 10 graphene layers) on AlN/Si(111) while preserving the morphology of the AlN layer beneath the graphitic film. This study is an important step for the integration of graphene with semiconductors other than SiC.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 104 (7), 2014-02-17
AIP Publishing