書誌事項
- 公開日
- 1995-05
- 権利情報
-
- https://www.elsevier.com/tdm/userlicense/1.0/
- https://www.elsevier.com/legal/tdmrep-license
- DOI
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- 10.1016/0168-583x(94)00658-x
- 公開者
- Elsevier BV
この論文をさがす
説明
Abstract Low-damage surface processing by gas cluster ion beams has been studied at acceleration voltages below 20 kV. Surfaces of several kinds of targets were smoothed significantly by CO 2 cluster ion irradiation at normal incidence. Surfaces were smoothed most effectively if the minimum cluster sizes were in the range of 150–250. SiO 2 films with a thickness of about 5.5 nm were grown on Si substrates at room temperature by irradiation with CO 2 cluster ions with a dose of 2 × 10 15 ions/cm 2 . A thin transition layer of 2.5 nm thickness was formed underneath the SiO 2 films. in addition, Si surfaces were cleaned after CO 2 and Ar cluster ion irradiation at low doses of less than 2 × 10 15 ions/cm 2 . The removal rates of surface impurities with cluster ions were 40–100 times higher than with monomer ions.
収録刊行物
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- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 99 (1-4), 229-232, 1995-05
Elsevier BV