Thermal contact resistance between graphene and silicon dioxide

Z. Chen, W. Jang, W. Bao, C. N. Lau, C. Dames

doi:10.1063/1.3245315

Thermal contact resistance between graphene and silicon dioxide

DOI PDF 被引用文献12件

Z. Chen

University of California 1 Department of Mechanical Engineering, , Riverside, California 92521, USA
W. Jang

University of California 1 Department of Mechanical Engineering, , Riverside, California 92521, USA
W. Bao

University of California 2 Department of Physics and Astronomy, , Riverside, California 92521, USA
C. N. Lau

University of California 2 Department of Physics and Astronomy, , Riverside, California 92521, USA
C. Dames

University of California 1 Department of Mechanical Engineering, , Riverside, California 92521, USA

書誌事項

公開日: 2009-10-19

DOI

10.1063/1.3245315

公開者: AIP Publishing

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説明

<jats:p>The thermal contact resistance between graphene and silicon dioxide was measured using a differential 3ω method. The sample thicknesses were 1.2 (single-layer graphene), 1.5, 2.8, and 3.0 nm, as determined by atomic force microscopy. All samples exhibited approximately the same temperature trend from 42 to 310 K, with no clear thickness dependence. The contact resistance at room temperature ranges from 5.6×10−9 to 1.2×10−8 m2 K/W, which is significantly lower than previous measurements involving related carbon materials. These results underscore graphene’s potential for applications in microelectronics and thermal management structures.</jats:p>