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- Qi Liu
- Institute of Microelectronics Laboratory of Nano-fabrication and Novel Devices Integrated Technology, , Chinese Academy of Sciences, Beijing 100029, People’s Republic of China
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- Weihua Guan
- Institute of Microelectronics Laboratory of Nano-fabrication and Novel Devices Integrated Technology, , Chinese Academy of Sciences, Beijing 100029, People’s Republic of China
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- Shibing Long
- Institute of Microelectronics Laboratory of Nano-fabrication and Novel Devices Integrated Technology, , Chinese Academy of Sciences, Beijing 100029, People’s Republic of China
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- Rui Jia
- Institute of Microelectronics Laboratory of Nano-fabrication and Novel Devices Integrated Technology, , Chinese Academy of Sciences, Beijing 100029, People’s Republic of China
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- Ming Liu
- Institute of Microelectronics Laboratory of Nano-fabrication and Novel Devices Integrated Technology, , Chinese Academy of Sciences, Beijing 100029, People’s Republic of China
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- Junning Chen
- Anhui University College of Electronics and Technology, , Hefei 230039, People’s Republic of China
書誌事項
- 公開日
- 2008-01-07
- DOI
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- 10.1063/1.2832660
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>The Au∕Cr∕Zr+-implanted-ZrO2∕n+-Si sandwiched structure exhibits reversible bipolar resistive switching behavior under dc sweeping voltage. The resistance ratio (Rratio) of high resistive state and low resistive state is as large as five orders of magnitude with 0.5V readout bias. Zr+-implanted-ZrO2 films exhibit good retention characteristics and high device yield. The impact of implanted Zr+ ions on resistive switching performances is investigated. Resistive switching of the fabricated structures is explained by trap-controlled space charge limited current conduction.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 92 (1), 012117-, 2008-01-07
AIP Publishing