Development of the next generation 1200V trench-gate FS-IGBT featuring lower EMI noise and lower switching loss
書誌事項
- 公開日
- 2007-05
- DOI
-
- 10.1109/ispsd.2007.4294920
- 公開者
- IEEE
収録刊行物
-
- Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's
-
Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's 13-16, 2007-05
IEEE
