Growth Strategy and Physical Properties of the High Mobility P-Type CuI Crystal
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- Dagui Chen
- Key Laboratory of Optoelectronic Material Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, PR China
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- Yongjing Wang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, PR China
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- Zhang Lin
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, PR China
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- Jiakui Huang
- Key Laboratory of Optoelectronic Material Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, PR China
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- XianZhi Chen
- Ningbo Institute of Material Technology & Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, PR China
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- Danmei Pan
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, PR China
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- Feng Huang
- Key Laboratory of Optoelectronic Material Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, PR China
書誌事項
- 公開日
- 2010-04-12
- DOI
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- 10.1021/cg100270d
- 公開者
- American Chemical Society (ACS)
この論文をさがす
収録刊行物
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- Crystal Growth & Design
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Crystal Growth & Design 10 (5), 2057-2060, 2010-04-12
American Chemical Society (ACS)