70 nm resolution in subsurface optical imaging of silicon integrated-circuits using pupil-function engineering
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- K. A. Serrels
- Heriot-Watt University Ultrafast Optics Group, School of Engineering and Physical Sciences, , Riccarton, Edinburgh EH14 4AS, United Kingdom
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- E. Ramsay
- Heriot-Watt University Ultrafast Optics Group, School of Engineering and Physical Sciences, , Riccarton, Edinburgh EH14 4AS, United Kingdom
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- D. T. Reid
- Heriot-Watt University Ultrafast Optics Group, School of Engineering and Physical Sciences, , Riccarton, Edinburgh EH14 4AS, United Kingdom
書誌事項
- 公開日
- 2009-02-16
- DOI
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- 10.1063/1.3081108
- 公開者
- AIP Publishing
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説明
<jats:p>We present experimental evidence for the resolution-enhancing effect of an annular pupil-plane aperture when performing nonlinear imaging in the vectorial-focusing regime through manipulation of the focal spot geometry. By acquiring two-photon optical beam-induced current images of a silicon integrated-circuit using solid-immersion-lens microscopy at 1550 nm we achieved 70 nm resolution. This result demonstrates a reduction in the minimum effective focal spot diameter of 36%. In addition, the annular-aperture-induced extension of the depth-of-focus causes an observable decrease in the depth contrast of the resulting image and we explain the origins of this using a simulation of the imaging process.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 94 (7), 073113-, 2009-02-16
AIP Publishing