Nonvolatile polycrystalline silicon thin film transistor memory using silicon-rich silicon nitride as charge storage layer

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  • Z. Pei
    National Chung Hsing University Graduate Institute of Optoelectronic, Department of Electrical Engineering, and Center of Nanoscience and Nanotechnology, , 402 Taichung, Taiwan, Republic of China
  • A. Chung
    National Tsing Hua University Department of Electrical Engineering, , 310 Hsinchu, Taiwan, Republic of China
  • H. L. Hwang
    National Tsing Hua University Department of Electrical Engineering, , 310 Hsinchu, Taiwan, Republic of China

Bibliographic Information

Published
2007-05-28
DOI
  • 10.1063/1.2745265
Publisher
AIP Publishing

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<jats:p>In this work, the authors report a memory device based on a Si thin film transistor (TFT) structure by incorporating silicon-rich silicon nitride (SRSN) film in the gate dielectric stacks as the charge storage layer. The SRSN film has a lower barrier for hole injection than the barrier for electron injection. Therefore, the memory window is dominated by hole injection. The memory window for TFT nonvolatile memory at steady state as large as 6.8V is observed, and the memory window is around 3V under pulse operation. In addition, this TFT memory has no significant degradation after 500 times of switching operation.</jats:p>

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