High hole mobility in Si0.17Ge0.83 channel metal–oxide–semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition

DOI PDF 被引用文献2件
  • G. Höck
    Department of Electron Devices and Circuits, University of Ulm, 89081 Ulm, Germany
  • E. Kohn
    Department of Electron Devices and Circuits, University of Ulm, 89081 Ulm, Germany
  • C. Rosenblad
    Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 Zürich, Switzerland
  • H. von Känel
    Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 Zürich, Switzerland
  • H.-J. Herzog
    Daimler Chrysler, Research and Technology, 89081 Ulm, Germany
  • U. König
    Daimler Chrysler, Research and Technology, 89081 Ulm, Germany

書誌事項

公開日
2000-06-26
DOI
  • 10.1063/1.126821
公開者
AIP Publishing

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説明

<jats:p>We report on effective hole mobility in SiGe-based metal–oxide–semiconductor (MOS) field-effect transistors grown by low-energy plasma-enhanced chemical vapor deposition. The heterostructure layer stack consists of a strained Si0.17Ge0.83 alloy channel on a thick compositionally-graded Si0.52Ge0.48 buffer. Structural assessment was done by high resolution x-ray diffraction. Maximum effective hole mobilities of 760 and 4400 cm2/Vs have been measured at 300 and 77 K, respectively. These values exceed the hole mobility in a conventional Si p-MOS device by a factor of 4 and reach the mobility data of conventional Si n-MOS transistors.</jats:p>

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