Temperature dependence of the band gap of GaSb1−xBix alloys with 0 < x ≤ 0.042 determined by photoreflectance
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- J. Kopaczek
- Institute of Physics, Wrocław University of Technology 1 , Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
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- R. Kudrawiec
- Institute of Physics, Wrocław University of Technology 1 , Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
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- W. M. Linhart
- Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, University of Liverpool 3 , Liverpool L69 7ZF, United Kingdom
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- M. K. Rajpalke
- Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, University of Liverpool 3 , Liverpool L69 7ZF, United Kingdom
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- K. M. Yu
- Material Sciences Division, Lawrence Berkeley National Laboratory 2 , 1 Cyclotron Road, Berkeley, California 94720, USA
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- T. S. Jones
- Department of Chemistry, University of Warwick 4 , Coventry CV4 7AL, United Kingdom
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- M. J. Ashwin
- Department of Chemistry, University of Warwick 4 , Coventry CV4 7AL, United Kingdom
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- J. Misiewicz
- Institute of Physics, Wrocław University of Technology 1 , Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
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- T. D. Veal
- Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, University of Liverpool 3 , Liverpool L69 7ZF, United Kingdom
説明
<jats:p>GaSb1−xBix layers with 0 < x ≤ 0.042 have been studied by photoreflectance in 15–290 K temperature range. We found that due to the incorporation of Bi atoms into the GaSb host, the E0 band gap-related transition redshifts (∼30 meV per 1% Bi) and significantly broadens. The shift of the E0 transition in the temperature range 10–270 K has been found to be ∼70 meV, very similar to the energy shift in GaSb over the same temperature range. We analyzed the energy and broadening of the E0 transition using the Varshni and Bose-Einstein formulas and found that the Varshni and Bose-Einstein parameters of GaSb1−xBix are similar to those of GaSb. Moreover we concluded that the inhomogeneities in GaSb1−xBix alloys is less important than in dilute bismide arsenides since Bi atoms are more similar to Sb atoms (in electronegativities and ionic sizes).</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 103 (26), 2013-12-23
AIP Publishing
