Interfacial characteristics of HfO2 grown on nitrided Ge (100) substrates by atomic-layer deposition
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- Hyoungsub Kim
- Department of Materials Science and Engineering , Stanford University, Stanford, California 94305
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- Paul C. McIntyre
- Department of Materials Science and Engineering , Stanford University, Stanford, California 94305
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- Chi On Chui
- Department of Electrical Engineering , Stanford University, Stanford, California 94305
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- Krishna C. Saraswat
- Department of Electrical Engineering , Stanford University, Stanford, California 94305
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- Mann-Ho Cho
- Nano-surface Group , Korea Research Institute of Standards and Science, Daejon 305-600, Korea
書誌事項
- 公開日
- 2004-10-04
- DOI
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- 10.1063/1.1797564
- 公開者
- AIP Publishing
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説明
<jats:p>The microstructural and electrical properties of Ge-based metal–oxide–semiconductor capacitors containing high-k gate dielectric layers were investigated with and without the presence of a GeOxNy interface layer. The effect of this nitrided layer on thermal stability of the metal oxide/Ge structures was probed by medium energy ion energy spectroscopy (MEIS). Atomic-layer deposited HfO2 on a chemical oxide-terminated Ge (100) surface exhibited poor capacitance–voltage behavior; however, direct substrate surface nitridation at 600°C in NH3 ambient before HfO2 deposition improved the carrier trapping characteristics. Diffusion of metal impurities (including Hf) into the interfacial oxide/Ge-substrate may be an important source of the measured degradation of electrical properties. MEIS results suggested that the GeOxNy interface layer may inhibit Hf diffusion into the underlying semiconductor at the temperatures investigated.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 85 (14), 2902-2904, 2004-10-04
AIP Publishing
