Probing the electron density in undoped, Si-doped, and Mg-doped InN nanowires by means of Raman scattering

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  • R. Cuscó
    Consell Superior d’Investigacions Científiques (CSIC) 1 Institut Jaume Almera, , Lluís Solé i Sabarís s.n., 08028 Barcelona, Spain
  • N. Domènech-Amador
    Consell Superior d’Investigacions Científiques (CSIC) 1 Institut Jaume Almera, , Lluís Solé i Sabarís s.n., 08028 Barcelona, Spain
  • L. Artús
    Consell Superior d’Investigacions Científiques (CSIC) 1 Institut Jaume Almera, , Lluís Solé i Sabarís s.n., 08028 Barcelona, Spain
  • T. Gotschke
    Research Center Jülich GmbH 2 Institute of Bio- and Nanosystems, , 52425 Jülich, Germany
  • K. Jeganathan
    Research Center Jülich GmbH 2 Institute of Bio- and Nanosystems, , 52425 Jülich, Germany
  • T. Stoica
    Research Center Jülich GmbH 2 Institute of Bio- and Nanosystems, , 52425 Jülich, Germany
  • R. Calarco
    Research Center Jülich GmbH 2 Institute of Bio- and Nanosystems, , 52425 Jülich, Germany

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<jats:p>We report a Raman scattering determination of the electron density in InN nanowires from the analysis of longitudinal optical-phonon-plasmon coupled modes. A Raman peak assigned to the L− coupled mode is observed in both undoped and doped InN nanowires. This peak exhibits a shift to higher (lower) frequencies in the Si-doped (Mg-doped) nanowires and allows us to estimate the electron density in the nanowires. A significant residual electron density is found in the undoped nanowires, which increases in Si-doped nanowires and is partially compensated in Mg-doped nanowires.</jats:p>

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