Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH<sub>3</sub> Treatment
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- Ji Chen
- School of Software and Microelectronics, Peking University, Beijing, China
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- Kuan-Chang Chang
- Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung, Taiwan
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- Ting-Chang Chang
- Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan
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- Tsung-Ming Tsai
- Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung, Taiwan
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- Chih-Hung Pan
- Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung, Taiwan
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- Rui Zhang
- Information Technology Center, Bureau of Geophysical Prospecting (BGP), China National Petroleum Cooperation, Beijing, China
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- Jen-Chung Lou
- School of Software and Microelectronics, Peking University, Beijing, China
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- Tian-Jian Chu
- Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung, Taiwan
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- Cheng-Hsien Wu
- Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung, Taiwan
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- Min-Chen Chen
- Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan
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- Ya-Chi Hung
- School of Software and Microelectronics, Peking University, Beijing, China
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- Yong-En Syu
- Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan
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- Jin-Cheng Zheng
- Department of Physics, Xiamen University, Xiamen, China
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- Simon M. Sze
- Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan
書誌事項
- 公開日
- 2015-11
- 権利情報
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- https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html
- https://doi.org/10.15223/policy-029
- https://doi.org/10.15223/policy-037
- DOI
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- 10.1109/led.2015.2477163
- 公開者
- Institute of Electrical and Electronics Engineers (IEEE)
この論文をさがす
収録刊行物
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- IEEE Electron Device Letters
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IEEE Electron Device Letters 36 (11), 1138-1141, 2015-11
Institute of Electrical and Electronics Engineers (IEEE)