Iron solubility in highly boron-doped silicon

DOI PDF 被引用文献4件
  • S. A. McHugo
    Lawrence Berkeley National Laboratory, Berkeley, California 94720
  • R. J. McDonald
    Lawrence Berkeley National Laboratory, Berkeley, California 94720
  • A. R. Smith
    Lawrence Berkeley National Laboratory, Berkeley, California 94720
  • D. L. Hurley
    Lawrence Berkeley National Laboratory, Berkeley, California 94720
  • E. R. Weber
    Department of Materials Science, University of California at Berkeley, Berkeley, California 94720

書誌事項

公開日
1998-09-07
DOI
  • 10.1063/1.121964
公開者
AIP Publishing

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<jats:p>We have directly measured the solubility of iron in high and low boron-doped silicon using instrumental neutron activation analysis. Iron solubilities were measured at 800, 900, 1000, and 1100 °C in silicon doped with either 1.5×1019 or 6.5×1014 boron atoms/cm3. We have measured a greater iron solubility in high boron-doped silicon as compared to low boron-doped silicon, however, the degree of enhancement is lower than anticipated at temperatures &gt;800 °C. The decreased enhancement is explained by a shift in the iron donor energy level towards the valence band at elevated temperatures. Based on this data, we have calculated the position of the iron donor level in the silicon band gap at elevated temperatures. We incorporate the iron energy level shift in calculations of iron solubility in silicon over a wide range of temperatures and boron-doping levels, providing a means to accurately predict iron segregation between high and low boron-doped silicon.</jats:p>

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