High-performance transparent flexible transistors using carbon nanotube films

DOI PDF 被引用文献25件 参考文献16件
  • Taishi Takenobu
    Tohoku University Institute for Material Research, , Sendai 980-8577, Japan and CREST, , Kawaguchi 330-0012, Japan
  • Tetsuo Takahashi
    Tohoku University Institute for Material Research, , Sendai 980-8577, Japan and CREST, , Kawaguchi 330-0012, Japan
  • Takayoshi Kanbara
    Tohoku University Institute for Material Research, , Sendai 980-8577, Japan and , Hirosawa 2-1, Wako 351-0198, Japan
  • Kazuhito Tsukagoshi
    RIKEN , Hirosawa 2-1, Wako 351-0198, Japan and PRESTO, , Kawaguchi 330-0012, Japan
  • Yoshinobu Aoyagi
    RIKEN , Hirosawa 2-1, Wako 351-0198, Japan and , Tokyo 152-8550, Japan
  • Yoshihiro Iwasa
    Tohoku University Institute for Material Research, , Sendai 980-8577, Japan and CREST, , Kawaguchi 330-0012, Japan

書誌事項

公開日
2006-01-16
DOI
  • 10.1063/1.2166693
公開者
AIP Publishing

この論文をさがす

説明

<jats:p>Transparent flexible thin-film transistors (tf-TFTs) are an important focus of research since present silicon-based electronics cannot realize such devices. Here, we demonstrate a single-walled carbon nanotube (SWNT) tf-TFTs based on the solution process using transparent electrodes. SWNT tf-TFTs typically exhibit a mobility of 0.5cm2∕Vs and an on/off current ratio of ∼104. More importantly, these transistors are highly flexible and can be bent to a radius of 7.5mm without a significant loss in performance. This study therefore represents a major step towards “SWNT transparent plastic electronics.”</jats:p>

収録刊行物

被引用文献 (25)*注記

もっと見る

参考文献 (16)*注記

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ