N‐Type 2D Organic Single Crystals for High‐Performance Organic Field‐Effect Transistors and Near‐Infrared Phototransistors
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- Cong Wang
- Department of Chemistry Tianjin Key Laboratory of Molecular Optoelectronic Sciences School of Science Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin) Tianjin 300072 China
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- Xiaochen Ren
- Department of Chemistry Tianjin Key Laboratory of Molecular Optoelectronic Sciences School of Science Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin) Tianjin 300072 China
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- Chunhui Xu
- Department of Chemistry Tianjin Key Laboratory of Molecular Optoelectronic Sciences School of Science Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin) Tianjin 300072 China
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- Beibei Fu
- Department of Chemistry Tianjin Key Laboratory of Molecular Optoelectronic Sciences School of Science Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin) Tianjin 300072 China
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- Ruihao Wang
- Key Laboratory of Synthetic and Self‐assembly Chemistry for Organic Functional Molecules Shanghai Institute of Organic Chemistry CAS Shanghai 200032 China
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- Xiaotao Zhang
- Department of Chemistry Tianjin Key Laboratory of Molecular Optoelectronic Sciences School of Science Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin) Tianjin 300072 China
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- Rongjin Li
- Department of Chemistry Tianjin Key Laboratory of Molecular Optoelectronic Sciences School of Science Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin) Tianjin 300072 China
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- Hongxiang Li
- Key Laboratory of Synthetic and Self‐assembly Chemistry for Organic Functional Molecules Shanghai Institute of Organic Chemistry CAS Shanghai 200032 China
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- Huanli Dong
- Beijing National Laboratory for Molecular Sciences Key Laboratory of Organic Solids Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China
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- Yonggang Zhen
- Beijing National Laboratory for Molecular Sciences Key Laboratory of Organic Solids Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China
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- Shengbin Lei
- Department of Chemistry Tianjin Key Laboratory of Molecular Optoelectronic Sciences School of Science Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin) Tianjin 300072 China
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- Lang Jiang
- Beijing National Laboratory for Molecular Sciences Key Laboratory of Organic Solids Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China
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- Wenping Hu
- Department of Chemistry Tianjin Key Laboratory of Molecular Optoelectronic Sciences School of Science Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin) Tianjin 300072 China
説明
<jats:title>Abstract</jats:title><jats:p>Organic field‐effect transistors and near‐infrared (NIR) organic phototransistors (OPTs) have attracted world's attention in many fields in the past decades. In general, the sensitivity, distinguishing the signal from noise, is the key parameter to evaluate the performance of NIR OPTs, which is decided by responsivity and dark current. 2D single crystal films of organic semiconductors (2DCOS) are promising functional materials due to their long‐range order in spite of only few molecular layers. Herein, for the first time, air‐stable 2DCOS of n‐type organic semiconductors (a furan‐thiophene quinoidal compound, TFT‐CN) with strong absorbance around 830 nm, by the facile drop‐casting method on the surface of water are successfully prepared. Almost millimeter‐sized TFT‐CN 2DCOS are obtained and their thickness is below 5 nm. A competitive field‐effect electron mobility (1.36 cm<jats:sup>2</jats:sup> V<jats:sup>−1</jats:sup> s<jats:sup>−1</jats:sup>) and high on/off ratio (up to 10<jats:sup>8</jats:sup>) are obtained in air. Impressively, the ultrasensitive NIR phototransistors operating at the off‐state exhibit a very low dark current of ≈0.3 pA and an ultrahigh detectivity (<jats:italic>D*</jats:italic>) exceeding 6 × 10<jats:sup>14</jats:sup> Jones because the devices can operate in full depletion at the off‐state, superior to the majority of the reported organic‐based NIR phototransistors.</jats:p>
収録刊行物
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- Advanced Materials
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Advanced Materials 30 (16), 1706260-, 2018-03-07
Wiley
