Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors

DOI PDF 26 Citations
  • S. Dhar
    Cree Inc. 1 Power Electronics R&D, , Durham, North Carolina 27703, USA
  • S. Haney
    Cree Inc. 1 Power Electronics R&D, , Durham, North Carolina 27703, USA
  • L. Cheng
    Cree Inc. 1 Power Electronics R&D, , Durham, North Carolina 27703, USA
  • S.-R. Ryu
    Cree Inc. 1 Power Electronics R&D, , Durham, North Carolina 27703, USA
  • A. K. Agarwal
    Cree Inc. 1 Power Electronics R&D, , Durham, North Carolina 27703, USA
  • L. C. Yu
    NIST 2 Semiconductor Electronics Division, , Gaithersburg, Maryland 20899, USA
  • K. P. Cheung
    NIST 2 Semiconductor Electronics Division, , Gaithersburg, Maryland 20899, USA

Bibliographic Information

Published
2010-09-01
DOI
  • 10.1063/1.3484043
Publisher
AIP Publishing

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<jats:p>Free electron concentration and carrier mobility measurements on 4H–SiC metal-oxide-semiconductor inversion layers are reported in this article. The key finding is that in state-of-the-art nitrided gate oxides, loss of carriers by trapping no longer plays a significant role in the current degradation under heavy inversion conditions. Rather, it is the low carrier mobility (maximum∼60 cm2 V−1 s−1) that limits the channel current. The measured free carrier concentration is modeled using the charge-sheet model and the mobility is modeled by existing mobility models. Possible mobility mechanisms have been discussed based on the modeling results.</jats:p>

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