ULTRAHIGH VACUUM ATOMIC FORCE MICROSCOPY: TRUE ATOMIC RESOLUTION

  • R. LÜTHI
    Institute of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
  • E. MEYER
    Institute of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
  • M. BAMMERLIN
    Institute of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
  • A. BARATOFF
    Institute of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
  • L. HOWALD
    Institute of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
  • CH. GERBER
    IBM Research Laboratory Zurich, Switzerland
  • H.-J. GÜNTHERODT
    Institute of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland

書誌事項

公開日
1997-10
DOI
  • 10.1142/s0218625x9700122x
公開者
World Scientific Pub Co Pte Lt

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説明

<jats:p> In this note we report the first observation of salient features of the Si(111)(7×7) reconstructed surface across monatomic steps by dynamic atomic force microscopy (AFM) in ultrahigh vacuum (UHV). Simultaneous measurements of the resonance frequency shift Δf of the Si cantilever and of the mean tunneling current [Formula: see text] from the cleaned Si tip indicate a restricted range for stable imaging with true atomic resolution. The corresponding characteristics vs. distance reveal why feedback control via Δf is problematic, whereas it is as successful as in conventional STM via [Formula: see text]. Furthermore, local dissipation (energy loss of 10<jats:sup>-14</jats:sup> W) through individual atoms is observed and explained by the coupling of the surface atoms to phonons. </jats:p>

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