Adsorption-controlled growth and the influence of stoichiometry on electronic transport in hybrid molecular beam epitaxy-grown BaSnO<sub>3</sub> films
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- Abhinav Prakash
- Chemical Engineering and Materials Science
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- Peng Xu
- Chemical Engineering and Materials Science
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- Xuewang Wu
- Mechanical Engineering
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- Greg Haugstad
- Characterization Facility
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- Xiaojia Wang
- Mechanical Engineering
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- Bharat Jalan
- Chemical Engineering and Materials Science
説明
<p>Adsorption-controlled growth and strong charge compensation accompanied by decreased electron mobility due to cation non-stoichiometry was discovered in epitaxial BaSnO3 films using a hybrid MBE approach.</p>
収録刊行物
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- Journal of Materials Chemistry C
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Journal of Materials Chemistry C 5 (23), 5730-5736, 2017
Royal Society of Chemistry (RSC)