Photoluminescence analysis of InGaP top cells for high-efficiency multi-junction solar cells
書誌事項
- 公開日
- 1997-02
- 権利情報
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- https://www.elsevier.com/tdm/userlicense/1.0/
- DOI
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- 10.1016/s0927-0248(96)00079-7
- 公開者
- Elsevier BV
この論文をさがす
説明
Abstract A way of evaluate the minority-carrier lifetime by using photoluminescence (PL) measurement is proposed which includes self-absorption. The room-temperature PL intensity is analyzed theoretically for bulk crystals and a device with n + -p junction configuration, based on a one-dimensional model. Photoluminescence analysis of In 0.5 Ga 0.5 P solar cells grown on GaAs and Si substrates by MOCVD (metal organic vapor deposition) have been carried out and compared with the properties of the In 0.5 Ga 0.5 P solar cells. By improving minority-carrier lifetime, high-efficiency In 0.5 Ga 0.5 P cells on GaAs substrates with an efficiency of 18.5% have been made.
収録刊行物
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- Solar Energy Materials and Solar Cells
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Solar Energy Materials and Solar Cells 45 (4), 331-339, 1997-02
Elsevier BV