Lower-current and fast switching of a perpendicular TMR for high speed and high density spin-transfer-torque MRAM
書誌事項
- 公開日
- 2008-12
- DOI
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- 10.1109/iedm.2008.4796680
- 公開者
- IEEE
説明
We investigate extremely low programming current and fast switching time of a perpendicular tunnel-magnetoresistance (P-TMR) for spin-transfer torque using a P-TMR cell of 50 nm-diameter. A L10-crystalline ordered alloy is used as a free layer that has excellent thermal stability and a damping constant of about 0.03. The programming current of 49 uA and the switching time of 4 nsec are also demonstrated.
収録刊行物
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- 2008 IEEE International Electron Devices Meeting
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2008 IEEE International Electron Devices Meeting 2008 1-4, 2008-12
IEEE