Low-temperature hysteresis effects in metal-oxide-silicon capacitors caused by surface-state trapping
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- A. Goetzberger
- Fraunhofer Society, Freiburg, West Germany
書誌事項
- 公開日
- 1968-12
- 権利情報
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- https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html
- https://doi.org/10.15223/policy-029
- https://doi.org/10.15223/policy-037
- DOI
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- 10.1109/t-ed.1968.16554
- 公開者
- Institute of Electrical and Electronics Engineers (IEEE)
この論文をさがす
収録刊行物
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- IEEE Transactions on Electron Devices
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IEEE Transactions on Electron Devices 15 (12), 1009-1014, 1968-12
Institute of Electrical and Electronics Engineers (IEEE)

