Observation of the Mott–Gurney law in tris (8-hydroxyquinoline) aluminum films

DOI PDF 2 Citations
  • M. Kiy
    Swiss Federal Institute of Technology Zürich, Nonlinear Optics Laboratory, Institute of Quantum Electronics, ETH Hönggerberg HPF E7, CH-8093 Zürich, Switzerland
  • P. Losio
    Swiss Federal Institute of Technology Zürich, Nonlinear Optics Laboratory, Institute of Quantum Electronics, ETH Hönggerberg HPF E7, CH-8093 Zürich, Switzerland
  • I. Biaggio
    Swiss Federal Institute of Technology Zürich, Nonlinear Optics Laboratory, Institute of Quantum Electronics, ETH Hönggerberg HPF E7, CH-8093 Zürich, Switzerland
  • M. Koehler
    Swiss Federal Institute of Technology Zürich, Nonlinear Optics Laboratory, Institute of Quantum Electronics, ETH Hönggerberg HPF E7, CH-8093 Zürich, Switzerland
  • A. Tapponnier
    Swiss Federal Institute of Technology Zürich, Nonlinear Optics Laboratory, Institute of Quantum Electronics, ETH Hönggerberg HPF E7, CH-8093 Zürich, Switzerland
  • P. Günter
    Swiss Federal Institute of Technology Zürich, Nonlinear Optics Laboratory, Institute of Quantum Electronics, ETH Hönggerberg HPF E7, CH-8093 Zürich, Switzerland

Description

<jats:p>We show that tris (8-hydroxyquinoline) aluminum (Alq3) thin films produced and characterized under ultrahigh vacuum conditions present a well-defined squared-law dependence of the injected current on the applied voltage at applied electric fields of the order of 0.25–1 MV/cm. From this, one derives an electric-field-independent electron mobility of the order of 10−7 cm2/(V s), with a variation between different samples of about one order of magnitude. Observations of current–voltage characteristics with clear indications of trap-filling and space-charge-limited conduction at high fields in Alq3 excludes the existence of traps with an exponential distribution of trap energies, as is commonly assumed in amorphous materials.</jats:p>

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