書誌事項
- 公開日
- 1991-04
- 権利情報
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- https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html
- DOI
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- 10.1109/16.75219
- 公開者
- Institute of Electrical and Electronics Engineers (IEEE)
この論文をさがす
説明
A simple, general, yet realistic MOSFET model, the nth power law MOSFET model, is introduced. The model can express I-V characteristics of short-channel MOSFETs at least down to 0.25- mu m channel length and of resistance inserted MOSFETs. The model evaluation time is about 1/3 of the evaluation time of the SPICE3 MOS LEVEL3 model. The model parameter extraction is done by solving single variable equations and thus can be done within a second, unlike the fitting procedure with expensive numerical iterations used for the conventional models. The model also permits analytical treatment of circuits in the short-channel region and plays the role of a bridge between complicated MOSFET current characteristics and circuit behavior in the deep-submicrometer region. >
収録刊行物
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- IEEE Transactions on Electron Devices
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IEEE Transactions on Electron Devices 38 (4), 887-894, 1991-04
Institute of Electrical and Electronics Engineers (IEEE)
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詳細情報 詳細情報について
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- CRID
- 1362262945268706304
-
- DOI
- 10.1109/16.75219
-
- ISSN
- 00189383
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- データソース種別
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- Crossref
- OpenAIRE