Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2 films on TiN bottom and TiN or RuO2 top electrodes

Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Woojin Jeon, Taehwan Moon, Cheol Seong Hwang

doi:10.1002/pssr.201409017

<jats:title>Abstract</jats:title><jats:p><jats:boxed-text content-type="graphic" position="anchor"><jats:graphic xmlns:xlink="http://www.w3.org/1999/xlink" mimetype="image/gif" position="anchor" specific-use="enlarged-web-image" xlink:href="graphic/mfocusissueoxides.gif"><jats:alt-text>magnified image</jats:alt-text></jats:graphic></jats:boxed-text></jats:p><jats:p>The effect of the top electrode (TE) on the ferroelectric properties and switching endurance of thin Hf<jats:sub>0.5</jats:sub>Zr<jats:sub>0.5</jats:sub>O<jats:sub>2</jats:sub> films was examined. The TiN/Hf<jats:sub>0.5</jats:sub>Zr<jats:sub>0.5</jats:sub>O<jats:sub>2</jats:sub>/TiN capacitor can endure electric cycling up to 10<jats:sup>9</jats:sup> times, which is promising for the next‐generation memory. RuO<jats:sub>2</jats:sub> TE was reduced during annealing due to the reactive TiN bottom electrode, resulting in the degradation of the ferroelectric properties and endurance. In addition, the endurance of the TiN/Hf<jats:sub>0.5</jats:sub>Zr<jats:sub>0.5</jats:sub>O<jats:sub>2</jats:sub>/TiN capacitors was optimized by changing the film thickness and the postannealing temperature. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p>

Ferroelectric properties and switching endurance of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films on TiN bottom and TiN or RuO<sub>2</sub> top electrodes

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