DNA detection on transistor arrays following mutation-specific enzymatic amplification

DOI PDF 被引用文献9件
  • F. Pouthas
    Laboratoire de Physique de la Matière Condensée, Ecole Normale Supérieure, 24 rue Lhomond, 75005 Paris, France
  • C. Gentil
    Laboratoire de Physique de la Matière Condensée, Ecole Normale Supérieure, 24 rue Lhomond, 75005 Paris, France
  • D. Côte
    Laboratoire de Physique de la Matière Condensée, Ecole Normale Supérieure, 24 rue Lhomond, 75005 Paris, France
  • U. Bockelmann
    Laboratoire de Physique de la Matière Condensée, Ecole Normale Supérieure, 24 rue Lhomond, 75005 Paris, France

書誌事項

公開日
2004-03-01
DOI
  • 10.1063/1.1650907
公開者
AIP Publishing

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<jats:p>An integrated array of silicon field-effect transistor structures is used for electronic detection of label-free DNA. Measurements of the dc current–voltage characteristics of the transistors gives us access to reproducible detection of single- and double-stranded DNA, locally adsorbed on the surface of the device. We combine this approach with allele-specific polymerase chain reaction, to test for the 35delG mutation, a frequent mutation related to prelingual nonsyndromic deafness.</jats:p>

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