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- A. Gupta
- Department of Materials Science and Engineering and NSF Center for Advanced Materials
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- H. Wang
- Department of Materials Science and Engineering and NSF Center for Advanced Materials
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- A. Kvit
- Department of Materials Science and Engineering and NSF Center for Advanced Materials
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- G. Duscher
- Department of Materials Science and Engineering and NSF Center for Advanced Materials and Smart Structures, North Carolina State University, Raleigh, North Carolina 27695-7916
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- J. Narayan
- Department of Materials Science and Engineering and NSF Center for Advanced Materials and Smart Structures, North Carolina State University, Raleigh, North Carolina 27695-7916.
書誌事項
- 公開日
- 2003-05-01
- DOI
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- 10.1063/1.1566472
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>We investigated the effect of the microstructure of TiN films on the diffusion behavior of Cu. Cu/TiN films were synthesized on Si(100) substrate by the pulsed laser deposition (PLD) technique. Three different microstructures of TiN were achieved by growing the films at different substrate temperatures, where higher deposition temperatures (∼650 °C) led to epitaxial growth by the mechanism of domain matching epitaxy and lower temperature depositions resulted in polycrystalline and nanocrystalline TiN films. These structures were characterized using x-ray diffraction and high-resolution transmission electron microscopy. Cu was deposited in situ on the samples with three different microstructures of TiN films on Si(100) by PLD. All three samples were simultaneously annealed at 500 °C for 30 min in high vacuum to study the effect of diffusion characteristics of Cu as a function of microstructure of the TiN films. Secondary ion mass spectroscopy, Z-contrast imaging and electron energy-loss spectroscopy were used to understand the diffusion mechanisms and rationalize results in different microstructures.</jats:p>
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 93 (9), 5210-5214, 2003-05-01
AIP Publishing
